Ultra-High Power Semiconductor (UHPS) Lab

Korea Institute of Energy Technology · Energy Engineering

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Professor

Prof. 강혜민

About

강혜민 교수 연구실(Ultra-High Power Semiconductor Lab)은 KENTECH 에너지공학부(Grid Modernization) 소속으로, 초고전력 반도체 소자를 연구한다. Power MOSFET·IGBT·PIN 다이오드 등 전력반도체 설계와 혼합모드 시뮬레이션, 전력변환을 다루며, 교수는 케임브리지대 전기공학 박사 출신이다.

Research keywords

Ultra-High Power Semiconductor (UHPS)

Selected publications

Impact of Gamma-Ray Irradiation on the Dynamic Switching Performance of 650 V Field Stop IGBTs: An Experimental and Simulation StudyIEEE Transactions on Electron Devices · 2025
Comparative Study of Proton and Gamma-Ray Radiation on the Threshold Voltage Shifts and the Reverse Recovery of Superjunction MOSFETsIEEE Transactions on Electron Devices · 2025
On the Analysis of Asymmetrical Switching of SiC MOSFETsIEEE Transactions on Power Electronics · 2025
Plateau Voltage and Dynamic Capacitance Effect on SiC MOSFETs' Gate RingingIEEE Transactions on Electron Devices · 2024
Bipolar to unipolar conversion in superjunction MOSFETs during resonant switchingPower Electronic Devices and Components · 2024
Gamma Ray on Superjunction MOSFET and Gate RingingIEEE Transactions on Electron Devices · 2024

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