Cho Byungjin Lab

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Professor

Prof. 조병진

About

조병진 교수의 NAND Lab(Nanoelectronic And Neuromorphic Device Lab)은 KAIST 전기및전자공학부 소속으로 첨단 반도체 소자 기술을 연구한다. 강유전체 기반 뉴로모픽·차세대 로직 소자(3D 모놀리식 IC), 3D NAND 플래시·DRAM 등 나노 전자 메모리 소자, 초고전력·광검출용 산화물(와이드밴드갭) 반도체 소자를 주로 다룬다. 또한 인체 열로 전력을 만드는 유연 열전소자(flexible thermoelectric generator) 연구로도 잘 알려져 있다.

Research keywords

Nano Electronics & Neuromorphic Device

Selected publications

High-Pressure Deuterium Annealing Effect on HfO2-Based Gate-All-Around Ferroelectric FETIEEE Electron Device Letters · 2026
Barrier Engineering of Silicon-Doped Boron Nitride in the Charge Trap Layer for High Performance 3D V-NAND Flash MemoryIEEE Transactions on Electron Devices · 2026
Performance improvement of NiO/β-Ga2O3 heterojunction diodes using ultrathin amorphous BN interfacial layerApplied Physics Letters · 2026
High-Performance Heterogeneous 3-D Sequential CFETs Using Pulsed Green Laser AnnealingIEEE Transactions on Electron Devices · 2025
Bandgap-Engineered Boron Oxynitride Tunneling Layer for Reliable PLC operation of 3D V-NAND Flash Memory DevicesIEEE International Electron Devices Meeting (IEDM) · 2025
Backside Ferroelectric-Assisted Charge Trap Flash (BF-CTF) Device for a Wide Memory Window and Read Disturbance-Free PerformanceIEEE Electron Device Letters · 2025

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